| PART |
Description |
Maker |
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| AD806706 AD8067ARTZ-R2 AD8067ARTZ-REEL AD8067 |
High Gain Bandwidth Product, Precision Fast FET?Op Amp
High Gain Bandwidth Product, Precision Fast FET⑩ Op Amp
High Gain Bandwidth Product, Precision Fast FET?/a> Op Amp
High Gain Bandwidth Product, Precision FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial OP-AMP, 1000 uV OFFSET-MAX, PDSO5
|
Analog Devices, Inc.
|
| 2SD2318 |
High DC current gain. Low saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
| 2STF2220 |
High Gain Low Voltage PNP Power Transistor
|
STMICROELECTRONICS[STMicroelectronics]
|
